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The paper reports optical orientation experiments performed in the narrowGaAs/AlGaAs quantum wells doped with Mn. We experimentally demonstrate acontrol over the spin polarization by means of the optical orientation via theimpurity-to-band excitation and observe a sign inversion of the luminescencepolarization depending on the pump power. The g factor of a hole localized onthe Mn acceptor in the quantum well was also found to be considerably modifiedfrom its bulk value due to the quantum confinement effect. This finding showsthe importance of the local environment on magnetic properties of the dopantsin semiconductor nanostructures.

Optical orientation of spins in GaAs:Mn/AlGaAs quantum wells via impurity-to-band excitation