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Motivated by the recent discovery of quantized spin Hall effect in InAs/GaSbquantum wells\cite{du2013}$^,$\cite{xu2014}, we theoretically study the effectsof in-plane magnetic field and strain effect to the quantization of chargeconductance by using Landauer-Butikker formalism. Our theory predicts arobustness of the conductance quantization against the magnetic field up to avery high field of 20 tesla. We use a disordered hopping term to model thestrain and show that the strain may help the quantization of the conductance.Relevance to the experiments will be discussed.

The effect of in-plane magnetic field and applied strain in quantum spin Hall systems: application to InAs/GaSb quantum wells