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We have carried out $^{125}$Te nuclear magnetic resonance (NMR) in a widetemperature range of 1.5 -- 300 K to investigate electronic properties ofGe$_{50}$Te$_{50}$, Ag$_{2}$Ge$_{48}$Te$_{50}$ and Sb$_{2}$Ge$_{48}$Te$_{50}$from a microscopic point of view. From the temperature dependence of NMR shift($K$) and nuclear spin lattice relaxation rate (1/$T_1$), we found that twobands contribute to the physical properties of the materials. One band overlapsthe Fermi level providing the metallic state where no strong electroncorrelations are revealed by Korringa analysis. The other band is separatedfrom the Fermi level by an energy gap of $E_{\rm g}/k_{\rm B}$ $\sim$ 67 K,which gives rise to the semiconductor-like properties. First principlecalculation revealed that the metallic band originates from the Ge vacancywhile the semiconductor-like band may be related to the fine structure of thedensity of states near the Fermi level. Low temperature $^{125}$Te NMR data forthe materials studied here clearly show that the Ag substitution increases holeconcentration while Sb substitution decreases it.

Electronic properties of GeTe and Ag- or Sb-substituted GeTe studied by low temperature 125Te NMR