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Heusler compounds are widely studied due to their variety of magneticproperties making them ideal candidates for spintronic and magnetoelectronicapplications. V$_3$Al in its metastable D0$_3$-type Heusler structure is aprototype for a rare antiferromagnetic gapless behavior. We provide anextensive study on the electronic and magnetic properties of V$_3$Al, V$_3$Gaand V$_3$In compounds based on state-of-the-art electronic structurecalculations. We show that the ground state for all three is a G-type itinerantantiferromagnetic gapless semiconductor. The large antiferromagnetic exchangeinteractions lead to very high N\'eel temperatures, which are predicted to bearound 1000 K. The coexistence of the gapless and antiferromagnetic behaviorsin these compounds can be explained considering the simultaneous presence ofthree V atoms at the unit cell using arguments which have been employed forusual inverse Heusler compounds. We expect that our study on these compounds toenhance further the interest on them towards the optimization of their growthconditions and their eventual incorporation in devices.

Itinerant G-type antiferromagnetism in D0$_3$-type V$_3$Z (Z=Al, Ga, In) compounds: A first-principles study