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Silicon-vacancy (SiV) centers in diamond are promising systems for quantuminformation applications due to their bright single photon emission andoptically accessible spin states. Furthermore, SiV centers in low-straindiamond are insensitive to pertubations of the dielectric environment, i.e.they show very weak spectral diffusion. This property renders ensembles of SiVcenters interesting for sensing applications. We here report onphotoluminescence excitation (PLE) spectroscopy on an SiV ensemble in a lowstrain, CVD-grown high quality diamond layer, where we measure the finestructure with high resolution and obtain the linewidths and splittings of theSiV centers. We investigate the temperature dependence of the width andposition of the fine structure peaks. Our measurements reveal linewidths ofabout 10 GHz as compared to a lifetime limited width on the order of 0.1 GHz.This difference arises from the inhomogeneous broadening of the transitionscaused by residual strain. To overcome inhomogeneous broadening we use spectralhole burning spectroscopy which enables us to measure a nearly lifetime limitedhomogeneous linewidth of 279 MHz. Furthermore, we demonstrate evidence ofcoherent interaction in the system by driving a $\Lambda$-scheme. Additionalmeasurements on single emitters created by ion implantation confirm thehomogeneous linewidths seen in the spectral hole burning experiments and relatethe ground state splitting to the decoherence rate.

Photoluminescence excitation and spectral hole burning spectroscopy of silicon vacancy centers in diamond