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Resonant x-ray emission spectroscopy (RXES) was employed at the U L3absorption edge and the La1 emission line to explore the 5f occupancy, nf, andthe degree of 5f orbital delocalization in the hidden order compound URu2Si2.By comparing to suitable reference materials such as UF4, UCd11, and alpha-U,we conclude that the 5f orbital in URu2Si2 is at least partially delocalizedwith nf = 2.87 +/- 0.08, and does not change with temperature down to 10 Kwithin the estimated error. These results place further constraints ontheoretical explanations of the hidden order, especially those requiring alocalized f2 ground state.

Probing 5f-state configurations in URu2Si2 with U L3-edge resonant x-ray emission spectroscopy