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A new nano-lithography technique compatible with conducting oxide interfaces,which requires a single lithographic step with no additional amorphous layerdeposition or etching, is presented. It is demonstrated on SrTiO3/LaAlO3interface where a constriction is patterned in the electron liquid. We findthat an additional back-gating can further confine the electron liquid into anisolated island. Conductance and differential conductance measurements showresonant tunneling through the island. The data at various temperatures andmagnetic fields are analyzed and the effective island size is found to be ofthe order of 10nm. The magnetic field dependence suggests absence of spindegeneracy in the island. Our method is suitable for creating superconductingand oxide-interface based electronic devices.

Tunneling into a quantum confinement created by a single-step nano-lithography of conducting oxide interfaces