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We investigate the magneto-optical properties of excitons bound to singlestacking faults in high-purity GaAs. We find that the two-dimensional stackingfault potential binds an exciton composed of an electron and a heavy-hole, andconfirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scalesymmetry of the system. The unprecedented homogeneity of the stacking-faultpotential leads to ultra-narrow photoluminescence emission lines (withfull-width at half maximum ${\lesssim 80~\mu \text{eV} }$) and reveals a largemagnetic non-reciprocity effect that originates from the magneto-Stark effectfor mobile excitons. These measurements unambiguously determine the directionand magnitude of the giant electric dipole moment (${\gtrsim e \cdot10~\text{nm}}$) of the stacking-fault exciton, making stacking faults apromising new platform to study interacting excitonic gases.

Giant permanent dipole moment of 2D excitons bound to a single stacking fault