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Atomic nanowires on semiconductor surfaces induced by the adsorption ofmetallic atoms have attracted a lot of attention as possible hosts of theelusive, Tomonaga-Luttinger liquid. The Au/Ge(100) system in particular is thesubject of controversy as to whether the Au-induced nanowires do indeed hostexotic, 1D metallic states. We report on a thorough study of the electronicproperties of high quality nanowires formed at the Au/Ge(100) surface. Highresolution ARPES data show the low-lying Au-induced electronic states topossess a dispersion relation that depends on two orthogonal directions ink-space. Comparison of the E(k$_x$,k$_y$) surface measured using ARPES totight-binding calculations yields hopping parameters in the two differentdirections that differ by a factor of two. We find that the larger of the twohopping parameters corresponds, in fact, to the direction perpendicular to thenanowires (t$_{\perp}$). This, the topology of the $E$=$E_F$ contour ink$_{\||}$, and the fact that $t_{\||}$/$t_{\perp}\sim 0.5$ proves that theAu-induced electron pockets possess a 2D, closed Fermi surface, this firmlyplaces the Au/Ge(100) nanowire system outside being a potential hosts of aTomonaga-Luttinger liquid. We combine these ARPES data with STS measurements ofthe spatially-resolved electronic structure and find that the spatiallystraight conduction channels observed up to energies of order one electron voltbelow the Fermi level do not originate from the Au-induced states seen in theARPES data. The former are more likely to be associated with bulk Ge statesthat are localized to the subsurface region. Despite our proof of the 2D natureof the Au-induced nanowire and sub-surface Ge-related states, an anomaloussuppression of the density of states at the Fermi level is observed in both theSTS and ARPES data, this phenomenon is discussed in the light of the effects ofdisorder.

Gold-induced nanowires on the Ge(100) surface yield a 2D, and not a 1D electronic structure