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We investigate the effects of the orientation of the magnetic field and theorientation of a quantum dot, with respect to crystallographic coordinates, onthe quality of an electrically controlled qubit realized in a gatedsemiconductor quantum dot. We find that, due to the anisotropy of thespin-orbit interactions, varying the two orientations it is possible to tunethe qubit in the sense of optimizing the ratio of its couplings to phonons andto a control electric field. We find conditions under which such optimal setupcan be reached by solely reorienting the magnetic field, and when a specificpositioning of the dot is required. We also find that the knowledge of therelative sign of the spin-orbit interactions strengths allows to choose arobust optimal dot geometry, with the dot main axis along [110], or[1$\overline{1}$0], where the qubit can be always optimized by reorienting themagnetic field.

Optimal geometry of lateral GaAs and Si/SiGe quantum dots for electrical control of spin qubits