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F. Sun,1,2,3 N. N. Li,2 B. J. Chen,1 Y. T. Jia,1 L. J. Zhang,2 W. M. Li,1 G. Q. Zhao,1 L. Y. Xing,1 G. Fabbris,3,4 Y. G. Wang,5 Z. Deng,1 Y. J. Uemura,6 H. K. Mao,2,5 D. Haskel,3,* W. G. Yang,2,5,* and C. Q. Jin1,7,* 1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China 2Center for High Pressure Science & Technology Advanced Research (HPSTAR), Shanghai, 201203, China 3Advanced Photon Source (APS), Argonne National Laboratory, Argonne, Illinois 60439, USA 4Department of Physics, Washington University, St. Louis, Missouri 63130, USA 5High Pressure Synergetic Consortium (HPSynC), Geophysical Laboratory, Carnegie Institution of Washington, Argonne, Illinois 60439, USA 6Department of Physics, Columbia University, New York, New York 10027, USA 7Collaborative Innovation Center of Quantum Matter, Beijing 100871, China (Received 18 March 2016; revised manuscript received 11 May 2016; published 3 June 2016)

physical review. b./physical review. b

Pressure effect on the magnetism of the diluted magnetic semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mi mathvariant="normal">B</mml:mi><mml:msub><mml:mi mathvariant="normal">a</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">K</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow><mml:mo>)</mml:mo></mml:mrow><mml:msub><mml:mrow><mml:mo>(</…

Pressure effect on the magnetism of the diluted magnetic semiconductor(Ba1−xKx)(