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Among the interfacial transport modulations to the LaAlO3/SrTiO3 (LAO/STO)heterostructure, mechanical strain has been proven to be an effective approachby growing the LAO/STO films on different substrates with varying latticemismatches to STO. However, this lattice-mismatch-induced strain effect isstatic and biaxial, hindering the study of the strain effect in a dynamic way.In this work we realize dynamic and uniaxial strain to the LAO/STO oxideheterostructure at low temperature, through mechanical coupling from amagnetostrictive template. This anisotropic strain results in symmetry breakingat the interface and induces further splitting of the electronic band structureand therefore produces different conductivities along the x and y in-planedirections. In particular, we observe that along the strained direction theinterface conductivity decreases by up to 70% under a tensile strain, while itincreases by 6.8% under a compressive strain at 2 K. Also, it is revealed thatthe modulation on the interfacial transport property can be anisotropic, i.e.,the resistance changes differently when an excitation current is parallel orperpendicular to the strain direction. This approach of strain engineeringprovides another degree of freedom for control of transport properties of oxideheterostructures and opens an additional way to investigate strain effects inmaterials science.

Dynamic Modulation of the Transport Properties of the LaAlO3/SrTiO3 Interface Using Uniaxial Strain