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The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown byrf sputtering on Al2O3 substrates between top and bottom thin film Ptelectrodes. Magnetoelectric susceptibility was measured directly by applying anAC electric field and measuring the induced AC magnetic moment usingsuperconducting quantum interference device magnetometry. A linear dependenceof the induced AC magnetic moment on the AC electric field amplitude was found.The temperature dependence of the magnetoelectric susceptibility agreedqualitatively and quantitatively with prior measurements of bulk singlecrystals, but the characteristic temperatures of the film were lower than thoseof single crystals. It was also possible to reverse the sign of themagnetoelectric susceptibility by reversing the sign of the magnetic fieldapplied during cooling through the N\'eel temperature. A competition betweentotal magnetoelectric and Zeeman energies is proposed to explain the differencebetween film and bulk Cr2O3 regarding the cooling field dependence of themagnetoelectric effect.

Magnetoelectric properties of 500 nm Cr2O3 films