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GaAs/AlGaAs quantum dots grown by in-situ droplet etching and nanoholeinfilling offer a combination of strong charge confinement, optical efficiency,and spatial symmetry required for polarization entanglement and spin-photoninterface. Here we study spin properties of such dots. We find nearly vanishingelectron $g$-factor ($g_e<0.05$), providing a route for electrically drivenspin control schemes. Optical manipulation of the nuclear spin environment isdemonstrated with nuclear spin polarization up to $60\%$ achieved. NMRspectroscopy reveals the structure of two types of quantum dots and yields thesmall magnitude of residual strain $\epsilon_b<0.02\%$ which nevertheless leadsto long nuclear spin lifetimes exceeding 1000 s. The stability of the nuclearspin environment is advantageous for applications in quantum informationprocessing.

Electron and nuclear spin properties of the nanohole-filled GaAs/AlGaAs quantum dots