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The optical spin orientation effect in a GaAs/(Ga,Al)As quantum wellcontaining a high-mobility 2D electron gas was found to be due tospin-polarized minority carriers, the holes. The observed oscillations of boththe intensity and polarization of the photoluminescence in a magnetic field arewell described in a model whose main elements are resonant absorption of theexciting light by the Landau levels and mixing of the heavy- and light-holesubbands. After subtraction of these effects, the observed influence ofmagnetic fields on the spin polarization can be well interpreted by a standardapproach of the optical orientation method. The spin relaxation of holes iscontrolled by the Dyakonov-Perel' mechanism. Deceleration of the spinrelaxation by the magnetic field occurs through the Ivchenko mechanism - due tothe cyclotron motion of holes. Mobility of holes was found to be two orders ofmagnitude smaller than that of electrons, being determined by the scattering ofholes upon the electron gas.

Optical spin orientation of minority holes in a modulation-doped GaAs/(Ga,Al)As quantum well