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Simulations are carried out based on the dynamical mean-field theory (DMFT)in order to investigate the properties of correlated thin films for variousvalues of the chemical potential, temperature, interaction strength, andapplied transverse electric field. Application of a sufficiently strong fieldto a thin film at half-filling leads to the appearance of conducting regionsnear the surfaces of the film, whereas in doped slabs the application of afield leads to a conductivity enhancement on one side of the film and a gradualtransition to the insulating state on the opposite side. In addition to theinhomogeneous DMFT, an independent layer approximation (ILA) is considered, inwhich the properties of each layer are approximated by a homogeneous bulkenvironment. A comparison between the two approaches reveals that the lessexpensive ILA results are in good agreement with the DMFT approach, exceptclose to the metal-to-insulator transition points and in the layers immediatelyat the film surfaces. The hysteretic behavior (memory effect) characteristic ofthe bulk doping driven Mott transition persists in the slab.

An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach