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We present angle-dependent measurements of the effective g-factor g* in aGe-Si core-shell nanowire quantum dot. g* is found to be maximum when themagnetic field is pointing perpendicular to both the nanowire and the electricfield induced by local gates. Alignment of the magnetic field with the electricfield reduces g* significantly. g* is almost completely quenched when themagnetic field is aligned with the nanowire axis. These findings confirm recentcalculations, where the obtained anisotropy is attributed to a Rashba-typespin-orbit interaction induced by heavy-hole light-hole mixing. In principle,this facilitates manipulation of spin-orbit qubits by means of a continuoushigh-frequency electric field.

Electric-field dependent g-factor anisotropy in Ge-Si core-shell nanowire quantum dots