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We present a detailed study of magnetoresistance \r{ho}xx(H), Hall effect\r{ho}xy(H), and electrolyte gating effect in thin (<100 nm) exfoliatedcrystals of WTe2. We observe quantum oscillations in H of both \r{ho}xx(H) and\r{ho}xy(H), and identify four oscillation frequencies consistent with previousreports in thick crystals. \r{ho}xy(H) is linear in H at low H consistent withnear-perfect electron-hole compensation, however becomes nonlinear and changessign with increasing H, implying a breakdown of compensation. A field-dependentratio of carrier concentrations p/n can consistently explain \r{ho}xx(H) and\r{ho}xy(H) within a two-fluid model. We also employ an electrolytic gate tohighly electron-dope WTe2 with Li. The non-saturating \r{ho}xx(H) persists to H= 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significantdeviation from perfect electron-hole compensation (p/n = 0.84), where thetwo-fluid model predicts a saturating \r{ho}xx(H). Our results suggestelectron-hole compensation is not the mechanism for extremely largemagnetoresistance in WTe2, other alternative explanations need to beconsidered.

Breakdown of compensation and persistence of non-saturating magnetoresistance in WTe2 thin flakes