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Defects in silicon carbide are of intense and increasing interest forquantum-based applications due to this material's properties and technologicalmaturity. We calculate the multi-particle symmetry adapted wave functions ofthe negatively charged silicon vacancy defect in hexagonal silicon carbide viause of group theory and density functional theory and find the effects ofspin-orbit and spin-spin interactions on these states. Although we focused on$\textrm{V}_{\textrm{Si}}^-$ in 4H-SiC, because of its unique fine structuredue to odd number of active electrons, our methods can be easily applied toother defect centers of different polytpes, especially to the 6H-SiC. Based onthese results we identify the mechanism that polarizes the spin under opticaldrive, obtain the ordering of its dark doublet states, point out a path forelectric field or strain sensing, and find the theoretical value of itsground-state zero field splitting to be 68 MHz, in good agreement withexperiment. Moreover, we present two distinct protocols of a spin-photoninterface based on this defect. Our results pave the way toward novel quantuminformation and quantum metrology applications with silicon carbide.

Silicon vacancy center in 4H-SiC: Electronic structure and spin-photon interfaces