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Phenomena originated from spin-orbit interaction, such as magnetic anisotropy(MA), Rashba-type interactions, or topological insulators, have drawn hugeattention for its intriguing physics. In particular, the search for a novelantiferromagnetic material, with potentially large perpendicular MA (PMA), hasbeen becoming very intensive for next-generation high density memoryapplications. Here, we propose that substitutions of transition metals Ru andIr, neighboring and same group elements in the periodic table, for the Rh sitein the vicinity of surface can induce a substantially large PMA, up to an orderof magnitude of 20 erg/cm2, in FeRh films on MgO. The main driving mechanismfor this huge PMA is the interplay between the dxy and dx2-y2 states of strongspin-orbit 4d and 5d orbitals. Further investigations demonstrate thatmagnetization direction of PMA undergoes a transition into an in-planemagnetization at the antiferromagnetic-to-ferromagnetic phase transition, whichprovides a viable route for achieving large and switchable PMA associated withthe magnetic-phase transition in antiferromagnetic spintronics.Comment: This paper has been withdrawn by the author due to the incompleteness  of figure caption in Figure

Magnetization reversal of giant perpendicular magnetic anisotropy at the magnetic-phase transition in FeRh films on MgO