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Here, the widely spread oxygen vacancies (VO) in multiferroic materials can strongly affect their physical properties. However, their exact influence has rarely been identified in hexagonal manganites. Here, with the combined use of transmission electron microscopy (TEM) and first-principles calculations, we have systematically studied the electronic and crystal structure modifications induced by VO located at the same Mn atomic plane (in-plane VO). Our TEM experiments reveal that the easily formed in-plane VO not only influence the electronic structure of YMnO3 but alter the in-plane Wyckoff positions of Mn ions, which may subsequently affect the intraplane and interplane exchange interaction of Mn ions. The ferroelectricity is also impaired due to the introduction of VO. Further calculations confirm these electronic and structural changes and modifications. Our results indicate that the electronic and crystal structure of YMnO3 can be manipulated by the creation of VO.

physical review. b./physical review. b

Electronic and crystal structure changes induced by in-plane oxygen vacancies in multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>YMn</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>

Electronic and crystal structure changes induced by in-plane oxygen vacancies in multiferroicYMnO3