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We address the ballistic transmission of charge carriers across ordered linedefects in monolayer transition metal dichalcogenides. Our study reveals thepresence of a transport gap driven by spin-orbit interactions, spin and valleyfiltering, both stemming from a simple picture of spin and momentumconservation, as well as the electron-hole asymmetry of charge-carriertransmission. Electronic transport properties of experimentally observedordered line defects in monolayer MoS$_2$, in particular, the vacancy lines andinversion domain boundaries, are further investigated using first-principlesGreen's function methodology. Our calculations demonstrate the possibility ofachieving nearly complete spin polarization of charge carriers innanoelectronic devices based on engineered periodic line defects in monolayertransition metal dichalcogenides, thus suggesting a practical scheme forall-electric control of spin transport.

Spin- and valley-polarized transport across line defects in monolayer MoS2