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We report a reinvestigation of superconducting Sn$_{1-x}$In$_{x}$Te at bothlow and high In doping levels. Analysis of the superconductivity reveals afundamental change as a function of \textit{x}: the system evolves from aweakly coupled to a strongly coupled superconductor with increasing indiumcontent. Hall Effect measurements further show that the carrier density doesnot vary linearly with Indium content; indeed at high Indium content, thesamples are overall \textit{n}-type, which is contrary to expectations of thestandard picture of In$^{1+}$ replacing Sn$^{2+}$ in this material. Densityfunctional theory calculations probing the electronic state of In in SnTe showthat it does not act as a trivial hole dopant, but instead forms a distinct,partly filled In 5\textit{s} - Te 5\textit{p} hybridized state centered aroundE$_F$, very different from what is seen for other nominal hole dopants such asNa, Ag, and vacant Sn sites. We conclude that superconducting In-doped SnTetherefore cannot be considered as a simple hole doped semiconductor.

Resonance-state-induced superconductivity at high Indium contents in In-doped SnTe