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The electronic structure of Pb$_{1-x}$Sn$_{x}$Te is studied by using therelativistic Korringa-Kohn-Rostoker Green function method in the framework ofdensity functional theory. For all concentrations $x$, Pb$_{1-x}$Sn$_{x}$Te isa direct semiconductor with a narrow band gap. In contrast to pure leadtelluride, tin telluride shows an inverted band characteristic close to theFermi energy. It will be shown that this particular property can be tuned,first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressureor uniaxial strain. Furthermore, the magnitude of strain needed to switchbetween the regular and inverted band gap can be tuned by the alloycomposition. Thus, there is range of potential usage of Pb$_{1-x}$Sn$_{x}$Tefor spintronic applications.

The effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb$_{\text{1-x}}$Sn$_{\text{x}}$Te