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The electronic structure of the new diluted magnetic semiconductorBa$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ ($x=0.30$, $y=0.15$) insingle crystal form has been investigated by angle-resolved photoemissionspectroscopy (ARPES). %High density of states of nondispersive bands composedof the Zn $3d$ orbitals are observed with ultraviolet incident light.Measurements with soft x-rays clarify the host valence-band electronicstructure primarily composed of the As $4p$ states. Two hole pockets around the$\Gamma$ point, a hole corrugated cylinder surrounding the $\Gamma$ and Zpoints, and an electron pocket around the Z point are observed, and explain themetallic transport of Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$. Thisis contrasted with Ga$_{1-x}$Mn$_{x}$As (GaMnAs), where it is located above theAs $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearlyidentified. Resonance soft x-ray ARPES measurements reveal a nondispersive(Kondo resonance-like) Mn $3d$ impurity band near the Fermi level, as in thecase of GaMnAs. However, the impurity band is located well below the VBM,unlike the impurity band in GaMnAs, which is located around and above the VBM.We conclude that, while the strong hybridization between the Mn $3d$ and the As$4p$ orbitals plays an important role in creating the impurity band andinducing high temperature ferromagnetism in both systems, the metallictransport may predominantly occur in the host valence band inBa$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ and in the impurity band inGaMnAs.

physical review. b, condensed matter and materials physics

Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic  Semiconductor Ba$_{1-x}$K$_{x}$(Zn$_{1-y}$Mn$_{y}$)$_{2}$As$_{2}$ Studied by  Soft X-ray Angle Resolved Photoemission Spectroscopy