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We report a theoretical prediction of a new class of bulk and intrinsicquantum Anomalous Hall (QAH) insulators La$X$ ($X$=Br, Cl, and I) viarelativistic first-principle calculations. We find that these systems areinnate long-ranged ferromagnets which, with the help of intrinsic spin-orbitcoupling, become QAH insulators. A low-energy multiband tight binding model isdeveloped to understand the origin of the QAH effect. Finally integer Chernnumber is obtained via Berry phase computation for each two-dimensional plane.These materials have the added benefit of a sizable band gap of as large as$\sim$ 25 meV, with the flexibility of enhancing it to above 75 meV via strainengineering. The synthesis of La$X$ materials will provide the impurity-freesingle crystals and thin-film QAH insulators for versatile experiments andfunctionalities.

Intrinsic large gap quantum anomalous Hall insulators in La$X$ ($X$=Br, Cl, I)