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We study ballistic transport of Dirac fermions in silicene through arrays ofbarriers, of width $d$, in the presence of an exchange field $M$ and a tunablepotential of height $U$ or depth $-U$. The spin- and valley-resolvedconductances as functions of $U$ or $M$, exhibit resonances away from the Diracpoint (DP) and close to it a pronounced dip that becomes a gap when a criticalelectric field $E_z$ is applied. This gap widens by increasing the number ofbarriers and can be used to realize electric field-controlled switching of thecurrent. The spin $p_s$ and valley $p_v$ polarizations of the current near theDP increase with $E_z$ or $M$ and can reach 100\% for certain of their values.These field ranges widen significantly by increasing the number of barriers.Also, $p_s$ and $p_v$ oscillate nearly periodically with the separation betweenbarriers or wells and can be inverted by reversing $M$.

Spin- and valley-dependent transport through arrays of ferromagnetic silicene junctions