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We measured the absolute lengths of three single crystal silicon samples bymeans of an imaging Twyman-Green interferometer in the temperature range from 7K to 293 K with uncertainties of about 1 nm. From these measurements we extractthe coefficient of thermal expansion with uncertainties in the order of$1\times 10^{-9} {\rm /K}$. To access the functional dependence of the lengthon the temperature usually polynomials are fitted to the data. Instead we use aphysically motivated model equation with 7 fit parameters for the wholetemperature range. The coefficient of thermal expansion is obtained from thederivative of the best fit. The measurements conducted in 2012 and 2014demonstrate a high reproducibility and the agreement of two independentlyproduced samples supports single crystal silicon as reference material forthermal expansion. Although the results for all three samples agree with eachother and with measurements performed at other institutes, they significantlydiffer from the recommended values for thermal expansion of crystallinesilicon.

Thermal expansion coefficient of single crystal silicon from 7 K to 293 K