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Electronic properties of the Si(111)-$7\times 7$ surface are studied usingfour- and two-probe conductivity measurements and tunneling spectroscopy. Wedemonstrate that the temperature dependence of the surface conductivitycorresponds to the Efros-Shklovskii law at least in $10-100$~K temperaturerange. The energy gap at the Fermi level observed in tunneling spectroscopymeasurements at $T\geq 5$~K vanishes by thermal fluctuations at $T\approx30$~K, without any sign of the metal-insulator transition. We show that thelow-temperature energy gap observed by the tunneling spectroscopy technique isactually the consequence of the Coulomb blockade effect.

Electron correlation effects in transport and tunneling spectroscopy of the Si(111)-$7\times 7$ surface