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By means of scanning tunneling spectroscopy (STS) we study the electronicstructure of the III-V semiconductor surface InAs(111)A in the field emissionregime (above the vacuum level). At high sample bias voltages (approaching +10V), a series of well defined resonances are identified as the typical Starkshifted image states that are commonly found on metallic surfaces in the formof field emission resonances (FER). At lower bias voltages, a more complexsituation arises. Up to three double peaks are identified as the first threeFERs that are split due to their interaction with the periodic surfacepotential. The high corrugation of this potential is also quantified by meansof density functional theory (DFT) calculations. Another sharp resonance notbelonging to the FER series is associated with an unoccupied surface state.

Energy splitting of image states induced by the surface potential corrugation of InAs(111)A