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We have studied the anisotropy in the in-plane resistivity and the electronicstructure of isovalent Ru-substituted BaFe$_2$As$_2$ in theantiferromagnetic-orthorhombic phase using well-annealed crystals. Theanisotropy in the residual resistivity component increases in proportional tothe Ru dopant concentration, as in the case of Co-doped compounds. On the otherhand, both the residual resistivity and the resistivity anisotropy induced byisovalent Ru substitution is found to be one order of magnitude smaller thanthose induced by heterovalent Co substitution. Combined with angle-resolvedphotoemission spectroscopy results, which show almost the same anisotropic bandstructure both for the parent and Ru-substituted compounds, we confirm thescenario that the anisotropy in the residual resistivity arises fromanisotropic impurity scattering in the magneto-structurally ordered phaserather than directly from the anisotropic band structure of that phase.

In-plane electronic anisotropy in the antiferromagnetic-orthorhombic phase of isovalent-substituted Ba(Fe$_{1-x}$Ru$_x$)$_2$As$_2$