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Using X-ray photoelectron spectroscopy, thermal desorption spectroscopy, andscanning tunneling microscopy we show that upon keV Xe + irradiation ofgraphene on Ir(111), Xe atoms are trapped under the graphene. Upon annealing,aggregation of Xe leads to graphene bulges and blisters. The efficient trappingis an unexpected and remarkable phenomenon, given the absence of chemicalbinding of Xe to Ir and to graphene, the weak interaction of a perfect graphenelayer with Ir(111), as well as the substantial damage to graphene due toirradiation. By combining molecular dynamics simulations and density functionaltheory calculations with our experiments, we uncover the mechanism of trapping.We describe ways to avoid blister formation during graphene growth, and alsodemonstrate how ion implantation can be used to intentionally create blisterswithout introducing damage to the graphene layer. Our approach may provide apathway to synthesize new materials at a substrate - 2D material interface orto enable confined reactions at high pressures and temperatures.

Xe Irradiation of Graphene on Ir(111): From Trapping to Blistering