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In this work we introduce a low-energy Hamiltonian for single layer andbilayer black phosphorus that describes the electronic states at the vicinityof the gamma point. The model is based on a recently proposed tight-bindingdescription for electron and hole bands close to the Fermi level. We calculateexpressions for the Landau level spectrum as function of magnetic field and inthe case of bilayer black phosphorus we investigate the effect of an externalbias on the electronic band gap. The results showcase the highly anisotropiccharacter of black phosphorus and in particular for bilayer BP, the presence ofbias allows for a field-induced semiconductor-metal transition.

Landau levels of single layer and bilayer phosphorene