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Making use of droplet epitaxy, we systematically controlled the height ofself-assembled GaAs quantum dots by more than one order of magnitude. Thephotoluminescence spectra of single quantum dots revealed the strong dependenceof the spectral linewidth on the dot height. Tall dots with a height of ~30 nmshowed broad spectral peaks with an average width as large as ~5 meV, butshallow dots with a height of ~2 nm showed resolution-limited spectral lines(<120 micro eV). The measured height dependence of the linewidths is in goodagreement with Stark coefficients calculated for the experimental shapevariation. We attribute the microscopic source of fluctuating electric fieldsto the random motion of surface charges at the vacuum-semiconductor interface.Our results offer guidelines for creating frequency-locked photon sources,which will serve as key devices for long-distance quantum key distribution.

Size dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charges on spectral diffusion