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We generalize the Wannier interpolation of the electron-phonon matrixelements to the case of polar-optical coupling in polar semiconductors. Weverify our methodological developments against experiments, by calculating thewidths of the electronic bands due to electron-phonon scattering in GaAs, theprototype polar semiconductor. The calculated widths are then used to estimatethe broadenings of excitons at critical points in GaAs and the electron-phononrelaxation times of hot electrons. Our findings are in good agreement withavailable experimental data. Finally, we demonstrate that while the Fr\"ohlichinteraction is the dominant scattering process for electrons/holes close to thevalley minima, in agreement with low-field transport results, at higherenergies, the intervalley scattering dominates the relaxation dynamics of hotelectrons or holes. The capability of interpolating the polar-optical couplingopens new perspectives in the calculation of optical absorption and transportproperties in semiconductors and thermoelectrics.

Wannier interpolation of the electron-phonon matrix elements in polar semiconductors: Polar-optical coupling in GaAs