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Density-functional calculations are used to verify the atomic structure ofthe hexagonal In/Si(111)-($\sqrt{7}\times\sqrt{3}$) surface, which has beenconsidered to represent an ultimate two-dimensional (2D) limit of metallic Inoverlayers. Contrary to the prevailing assumption, this surface consists of nota single layer but a double layer of In atoms, which corresponds to a hexagonaldeformation of the well-established $rectangular$ In double layer formed onSi(111)-($\sqrt{7}\times\sqrt{3}$) [Park $et$ $al$., Phys. Rev. Lett. 109,166102 (2012)]. The same double-layer thickness accounts well for the typicalcoexistence of the hexagonal and rectangular phases and their similar 2Delectronic structures. It is thus conclusive that, regardless of rectangular orhexagonal, the In/Si(111)-($\sqrt{7}\times\sqrt{3}$) surface does not representan one-atom-thick In overlayer.

Hexagonal Indium Double Layer on Si(111)-($\sqrt{7}\times\sqrt{3})$