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We investigate theoretically the effect of nearby As (arsenic) vacancies onthe magnetic properties of substitutional Mn (manganese) impurities on the GaAs(110) surface, using a microscopic tight-binding model which captures thesalient features of the electronic structure of both types of defects in GaAs.The calculations show that the binding energy of the Mn-acceptor is essentiallyunaffected by the presence of a neutral As vacancy, even at the shortestpossible ${\rm V}_{\rm As}$--Mn separation. On the other hand, in contrast to asimple tip-induced-band-bending theory and in agreement with experiment, for apositively charged As vacancy the Mn-acceptor binding energy is significantlyreduced as the As vacancy is brought closer to the Mn impurity. For two Mnimpurities aligned ferromagnetically, we find that nearby charged As vacanciesenhance the energy level splitting of the associated coupled acceptor levels,leading to an increase of the effective exchange interaction. Neutral vacanciesleave the exchange splitting unchanged. Since it is experimentally possible toswitch reversibly between the two charge states of the vacancy, such a localelectric manipulation of the magnetic dopants could result in an efficientreal-time control of their exchange interaction.

Electric manipulation of the Mn-acceptor binding energy and the Mn-Mn exchange interaction on the GaAs (110) surface by nearby As vacancies