English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

The formation of a two-dimensional electron gas at oxide interfaces as aconsequence of polar discontinuities has generated an enormous amount ofactivity due to the variety of interesting effects it gives rise to. Here westudy under what circumstances similar processes can also take place underneathferroelectric thin films. We use a simple Landau model to demonstrate that inthe absence of extrinsic screening mechanisms a monodomain phase can bestabilized in ferroelectric films by means of an electronic reconstruction.Unlike in the LaAlO$_3$/SrTiO$_3$ heterostructure, the emergence with thicknessof the free charge at the interface is discontinuous. This prediction isconfirmed by performing first principles simulations of free standing slabs ofPbTiO$_3$. The model is also used to predict the response of the system to anapplied electric field, demonstrating that the two-dimensional electron gas canbe switched on and off discontinuously and in a non-volatile fashion.Furthermore, the reversal of the polarization can be used to switch between atwo-dimensional electron gas and a two-dimensional hole gas, which should, inprinciple, have very different transport properties. We discuss the possibleformation of polarization domains and how such configuration competes with thespontaneous accumulation of free charge at the interfaces.

Model of two-dimensional electron gas formation at ferroelectric interfaces