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Combined in-situ x-ray photoemission spectroscopy, scanning tunnellingspectroscopy and angle resolved photoemission spectroscopy of molecular beamepitaxy grown Bi2Te3 on lattice mismatched substrates reveal high qualitystoichiometric thin films with topological surface states without acontribution from the bulk bands at the Fermi energy. The absence of bulkstates at the Fermi energy is achieved without counter doping. We observe thatthe surface morphology and electronic band structure of Bi2Te3 are not affectedby in-vacuo storage and exposure to oxygen, whereas major changes are observedwhen exposed to ambient conditions. These films help define a pathway towardsintrinsic topological devices.

In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects