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Insulator-to-metal (MI) phase transition in vanadium dioxide (VO2) thin filmswith controlled lattice distortion was investigated by thermopowermeasurements. VO2 epitaxial films with different crystallographic orientations,grown on (0001) alpha-Al2O3, (11-20) alpha-Al2O3, and (001) TiO2 substrates,showed significant decrease of absolute value of Seebeck coefficient (S) from~200 to 23 microV K-1, along with a sharp drop in electrical resistivity (rho),due to the transition from an insulator to a metal. The MI transitiontemperatures observed both in rho (Trho) and S (TS) for the VO2 filmssystematically decrease with lattice shrinkage in the pseudo-rutile structurealong c-axis, accompanying a broadening of the MI transition temperature width.Moreover, the onset TS, where the insulating phase starts to become metallic,is much lower than onset Trho. This difference is attributed to the sensitivityof S for the detection of hidden metallic domains in the majority insulatingphase, which cannot be detected in rho-measurements. Consequently,S-measurements provide a straightforward and excellent approach for a deeperunderstanding of the MI transition process in VO2.

Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion