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Ab initio electronic structure calculations reveal that epitaxial strain has a dramatic effect on the voltage-controlled magnetic anisotropy (VCMA) in Ta/FeCo/MgO junctions. Strain can give rise to a wide range of novel VCMA behaviors where the MA can change from a $\ensuremath{\vee}$- to a $\ensuremath{\wedge}$-shape electric-field dependence with giant VCMA coefficients which are asymmetric under voltage reversal. The underlying mechanism is the interplay of the strain- and electric-field-induced changes in the spin-orbit coupled $d$ states at the interfaces and the strain-induced modification of the dielectric constant of MgO. These findings demonstrate the feasibility of highly sensitive VCMA through strain engineering, which may provide a viable avenue for tailoring magnetoelectric properties for spintronic applications.

Giant voltage modulation of magnetic anisotropy in strained heavy metal/magnet/insulator heterostructures