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We present a first-principles study of effects of small biaxial strain($|\varepsilon|\le 5\%$) and perpendicular electric field (E-field) on theelectronic and phonon properties of low-buckled silicene and germanene. With anincrease of the biaxial strain, the conduction bands at the high symmetric$\Gamma$ and $M$ points of the first Brillouin zone shift significantly towardsthe Fermi level in both silicene and germanene. In contrast, the E-fieldchanges the band dispersions near the $\Gamma$ and open a small band gap at theK point in silicene. We found that the field-induced gap opening in silicenecould be enhanced by a compressive strain while mitigated by a tensile strain.This result highlights the tunability of the electronic structures of siliceneby combining the mechanical strain and the electric field.

Tuning the electronic structures of silicene and germanene by biaxial strain and electric field