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We present a theoretical study on the electron transmission through the AB-BAstacking boundary in multilayer graphene. Using the tight-binding model and thetransfer matrix method, we calculate the electron transmission probabilitythrough the boundary as a function of electron Fermi energy in multilayers frombilayer to five-layer. We find that the transmission is strongly suppressedparticularly near the band touching point, suggesting that the electronicconductivity in general multilayer graphenes is significantly interfered bystacking fault. The conductivity suppression by stacking fault is the strongestin the bilayer graphene, while it is gradually relaxed as increasing the numberof layers. At a large carrier density, we observe an even-odd effect where thetransmission is relatively lower in trilayer and five-layer than in bilayer andfour-layer, and this is related to the existence of a monolayer-like linearband in odd layers. For bilayer graphene, we also study the effect of theperpendicular electric field opening an energy gap, and show that the banddeformation enhances the electron transmission at a fixed carrier density.

Electron transmission through the stacking domain boundary in multilayers graphene