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M. J. Wahila, Z. W. Lebens-Higgins, N. F. Quackenbush, J. Nishitani, 3 W. Walukiewicz, P.-A. Glans, J.-H. Guo, J. C. Woicik, K. M. Yu, 6 and L. F. J. Piper ∗ Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, New York 13902, USA Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba, 277-8581, Japan Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR, China

physical review. b, condensed matter and materials physics

Evidence of extreme type-III band offset at buried<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mtext>CdO</mml:mtext><mml:mo>/</mml:mo><mml:mi>p</mml:mi></mml:math>-type SnTe interfaces

Evidence of extreme type-III band offset at buriedn-typeCdO/p-type SnTe interfaces