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The surfaces of three-dimensional topological insulators (TIs) characterizedby a spin-helical Dirac fermion provide a fertile ground for realizing exoticphenomena as well as having potential for wide-ranging applications. To realizemost of their special properties, the Dirac point (DP) is required to belocated near the Fermi energy with a bulk insulating property while it ishardly achieved in most of the discovered TIs. It has been recently found thatTlBiSe2 features an in-gap DP, where upper and lower parts of surface Diraccone are both utilized. Nevertheless, investigations of the surface transportproperties of this material are limited due to the lack of bulk insulatingcharacteristics. Here, we present the first realization of bulk insulatingproperty by tuning the composition of Tl1-xBi1+xSe2-d without introducing guestatoms that can bring the novel properties into the reality. This resultpromises to shed light on new exotic topological phenomena on the surface.

Realization of bulk insulating property and carrier manipulation in reversible spin current regime of the ideal topological insulator TlBiSe2