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We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGequantum well, which emerges only when both perpendicular and in-plane magneticfields are present. The ratio of resistances, measured along and perpendicularto the in-plane field, can exceed $3\times 10^4$. The anisotropy occurs in awide range of filling factors where it is determined {\em primarily} by thetilt angle. The lack of significant anisotropy without an in-plane field, easytunability, and persistence to higher temperatures and filling factors set thisanisotropy apart from nematic phases in GaAs/AlGaAs.

Strong Transport Anisotropy in a Ge/SiGe Quantum Well in Tilted Magnetic Fields