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It was recently proposed that the stress state of a material can also bealtered via electron or hole doping, a concept termed electronic stress (ES),which is different from the traditional mechanical stress (MS) due to latticecontraction or expansion. Here we demonstrate the equivalence of ES and MS instructural stabilization, using In wires on Si(111) as a prototypical example.Our systematic density-functional theory calculations reveal that, first, forthe same degrees of carrier doping into the In wires, the ES of thehigh-temperature metallic 4x1 structure is only slightly compressive, whilethat of the low-temperature insulating 8x2 structure is much larger and highlyanisotropic. As a consequence, the intrinsic energy difference between the twophases is significantly reduced towards electronically phase-separated groundstates. Our calculations further demonstrate quantitatively that suchintriguing phase tunabilities can be achieved equivalently vialattice-contraction induced MS in the absence of charge doping. We alsovalidate the equivalence through our detailed scanning tunneling microscopyexperiments. The present findings have important implications in understandingthe underlying driving forces involved in various phase transitions of simpleand complex systems alike.

Equivalence of Electronic and Mechanical Stresses in Structural Phase Stabilization: A Case Study of Indium Wires on Si(111)