English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

We investigated the crystal and electronic structures of ferroelectricBi4Ti3O12 (BiT) single crystalline thin films site-specifically substitutedwith LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy onNdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing theLCO substitution, we observed a systematic increase in the c-axis latticeconstant of the Aurivillius phase related with the modification ofpseudo-orthorhombic unit cells. These compositional and structural changesresulted in a systematic decrease in the band gap, i.e., the optical transitionenergy between the oxygen 2p and transition metal 3d states, based on aspectroscopic ellipsometry study. In particular, the Co 3d state seems tolargely overlap with the Ti t2g state, decreasing the band gap. Interestingly,the applied tensile strain facilitates the band gap narrowing, demonstratingthat epitaxial strain is a useful tool to tune the electronic structure offerroelectric transition metal oxides.

Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films