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We report low-temperature transport studies of parallel double quantum dotsformed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regularpatterns of Coulomb diamonds are observed in the charge stability diagrams,which we ascribe to single-hole tunneling through a quantum dot in the GaSbcore. As the gate voltage increases, the measured charge stability diagramindicates the appearance of an additional quantum dot, which we suggest is anelectron quantum dot formed in the InAsSb shell. We find that an electron-holeinteraction induces shifts of transport resonances in the source-drain voltagefrom which an average electron-hole interaction strength of 2.9 meV isextracted. We also carry out magnetotransport measurements of a hole quantumdot in the GaSb core and extract level-dependent g- factors and a spin-orbitinteraction.

Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots