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The direction and impact parameter dependence of electronic stopping power,along with its velocity threshold behavior, is investigated in a prototypicalsmall band gap semiconductor. We calculate the electronic stopping power of Hin Ge, a semiconductor with relatively low packing density, using time-evolvingtime-dependent density-functional theory. The calculations are carried out inchanneling conditions with different impact parameters and in different crystaldirections, for projectile velocities ranging from 0.05 to 0.6 atomic units.The satisfactory comparison with available experiments supports the results andconclusions beyond experimental reach. The calculated electronic stopping poweris found to be different in different crystal directions; however, strongimpact parameter dependence is observed only in one of these directions. Thedistinct velocity threshold observed in experiments is well reproduced, and itsnon-trivial relation with the band gap follows a perturbation theory argumentsurprisingly well. This simple model is also successful in explaining whydifferent density functionals give the same threshold even with substantiallydifferent band gaps.

Electronic stopping power in a narrow band gap semiconductor from first principles